High-performance optical modulator with a wide center electrode and thin x-cut LiNbO3 substrate

We propose an excellent large-bandwidth back-slot lithium niobate (LN) modulator with a wide center electrode of typically 50 μm or wider and relatively thin electrodes. From the calculation, a modulator with a 3-dBe bandwidth of 34 GHz and a half-wave voltage of 2.0 V for a 50-/spl Omega/ character...

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Bibliographic Details
Published inIEEE photonics technology letters Vol. 16; no. 12; pp. 2610 - 2612
Main Authors Aoki, K., Jungo Kondo, Kondo, A., Mori, T., Mizuno, Y., Shimodaira, S., Imaeda, M., Kozuka, Y., Mitomi, O., Minakata, M.
Format Journal Article
LanguageEnglish
Published New York IEEE 01.12.2004
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subjects
Bandwidth
Colplanar waveguides
Electrodes
electrooptical modulation
Finite element methods
High speed optical techniques
Impedance
Optical buffering
Optical modulation
Optical waveguides
Structural engineering
traveling-wave devices
Voltage
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Summary:We propose an excellent large-bandwidth back-slot lithium niobate (LN) modulator with a wide center electrode of typically 50 μm or wider and relatively thin electrodes. From the calculation, a modulator with a 3-dBe bandwidth of 34 GHz and a half-wave voltage of 2.0 V for a 50-/spl Omega/ characteristic impedance system was realized theoretically. This means when their half-wave voltages are identical, by applying a wider electrode, the modulator bandwidth becomes 2.6 times larger than that of a conventional one. We also confirmed experimentally that the wide center electrode structure is effective for back-slot LN modulators.
ISSN:1041-1135
1941-0174
DOI:10.1109/LPT.2004.836358