Advanced wide cell pitch CSTBTs having light punch-through (LPT) structures

• Published in: Proceedings of the 14th International Symposium on Power Semiconductor Devices and Ics pp. 277 - 280
• Main Authors: Nakamura, K., Kusunoki, S., Nakamura, H., Ishimura, Y., Tomomatsu, Y., Minato, T.
• Format: Conference Proceeding
• Language: English
• Published: Piscataway NJ IEEE 2002
• Subjects: Applied sciences; Bipolar transistors; Capacitance; Circuits; Dielectrics; Electrical engineering. Electrical power engineering; Electronics; Exact sciences and technology; Insulated gate bipolar transistors; Leakage current; Low voltage; Other multijunction devices. Power transistors. Thyristors; Power electronics, power supplies; Power engineering and energy; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Switching loss; Ultra large scale integration; Performance evaluation; Waveform; Charge storage; Transistor collector; Trench technology; High voltage transistor; Voltage current curve; Insulated gate bipolar transistor; Loss rate; Power electronics; Chemical vapor deposition; LPT technology; Power transistor; Short circuit; Experimental result; Switching conditions; Gate oxide; Time curve; Leakage current; Power semiconductor devices; Transistor emitter; Reliability; Comparative study; Punch through effect
• ISBN: 0780373189; 9780780373181
• DOI: 10.1109/ISPSD.2002.1016225

In order to improve the total performance of nonpunch-through (NPT) type trench IGBT for the 1200/spl sim/1700 V region, a triple combination of concepts is adopted: "wide cell pitch" and "carrier stored trench-gate bipolar transistor (CSTBT)" for the emitter side, and "light punch-through (LPT)" structure for the collector side. The wide cell pitch LPT-CSTBT demonstrates lower on-state voltage, lower switching loss, lower junction leakage current than that of conventional NPT trench IGBT, and relatively large short circuit capability. In addition, our device shows excellent gate dielectric reliability by utilizing CVD gate oxide film. The LPT-CSTBT with CVD gate dielectric is a promising candidate for high voltage power devices, because its performance is approaches that of punch-through (PT) trench IGBTs.