Luminescent Properties of RbSrPO4:Eu2+ Phosphors for Near-UV-Based White-Light-Emitting Diodes
A phosphor based on a phosphate host matrix, RbSrPO4:Eu2+ (RSP), was synthesized by a conventional solid‐state reaction, and the crystal structure of the RSP host material was investigated by Rietveld refinement. The RSP phosphor could be excited efficiently by light in the 220–430 nm UV/Vis range a...
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Published in | European journal of inorganic chemistry Vol. 2013; no. 26; pp. 4662 - 4666 |
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Main Authors | , , , , , , , , |
Format | Journal Article |
Language | English |
Published |
Weinheim
WILEY-VCH Verlag
03.09.2013
WILEY‐VCH Verlag Wiley Subscription Services, Inc |
Subjects | |
Online Access | Get full text |
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Summary: | A phosphor based on a phosphate host matrix, RbSrPO4:Eu2+ (RSP), was synthesized by a conventional solid‐state reaction, and the crystal structure of the RSP host material was investigated by Rietveld refinement. The RSP phosphor could be excited efficiently by light in the 220–430 nm UV/Vis range and exhibited a highly intense emission peak at 450 nm. We discovered the effect of the activated Eu2+ concentration and the concentration quenching mechanism. Also, light absorption and quantum efficiency of the RSP phosphor were measured when excited in the near‐UV region. Finally, the effect of temperature on the photoluminescence emission intensity of the RSP phosphor and its thermal activation energy were investigated. All of these characteristics indicate that this phosphor has potential for use in near‐UV‐based white LEDs.
The crystal structure of the phosphate‐based host matrix RbSrPO4 is investigated by Rietveld refinement for the first time. The photoluminescence properties of Eu2+‐doped RbSrPO4 are explored, and the results indicate that this phosphor has potential for use in near‐UV‐based white‐light‐emitting diodes. |
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Bibliography: | istex:1B81950FD31912F76D2E96603DCAB550B393DED9 ark:/67375/WNG-413CLBHG-0 ArticleID:EJIC201300457 These authors contributed equally to this work. |
ISSN: | 1434-1948 1099-0682 |
DOI: | 10.1002/ejic.201300457 |