ZrO2 Ferroelectric FET for Non-volatile Memory Application

• Published in: IEEE electron device letters Vol. 40; no. 9; pp. 1419 - 1422
• Main Authors: Liu, Huan, Wang, Chengxu, Han, Genquan, Li, Jing, Peng, Yue, Liu, Yan, Wang, Xingsheng, Zhong, Ni, Duan, Chungang, Wang, Xinran, Xu, Nuo, Liu, Tsu-Jae King, Hao, Yue
• Format: Journal Article
• Language: English
• Published: New York IEEE 01.09.2019; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Anti-ferroelectric; Capacitors; Electrical measurement; Fatigue; ferroelectric; ferroelectric field-effect transistor (FeFET); Ferroelectric materials; Ferroelectricity; Field effect transistors; Germanium; Iron; Logic gates; Nonvolatile memory; Polarization; Semiconductor devices; Voltage measurement; Zirconium dioxide; ZrO
• ISSN: 0741-3106; 1558-0563
• DOI: 10.1109/LED.2019.2930458

We demonstrate for the first time ZrO 2 ferroelectric field-effect transistors (FeFETs) for embedded non-volatile memory applications. Multiple sweeps of polarization versus voltage measurement demonstrate that a metal/ZrO 2 /Ge capacitor is entirely free of wake-up effect and has significantly improved fatigue characteristics compared to a HfZrO x control device. Thanks to relatively small remnant polarization and a high-quality ZrO 2 /Ge interface, up to 10 7 cycles program/erase endurance, 10 ns program/erase speed, and >10-year data retention at 85 °C are achieved.