Analysis and prediction of stability in commercial, 1200 V, 33A, 4H-SiC MOSFETs

State-of-the-art, commercially available, 4H-SiC MOSFETs are evaluated for stability under high-temperature over-voltage and pulsed over-current conditions. The devices show maximum vulnerability under high-temperature accumulation stress, demonstrating that the gate oxide is more prone to hole trap...

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Bibliographic Details
Published in2012 IEEE International Reliability Physics Symposium (IRPS) pp. 3D.3.1 - 3D.3.5
Main Authors DasGupta, S., Kaplar, R. J., Marinella, M. J., Smith, M. A., Atcitty, S.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.04.2012
Subjects
Charge carrier processes
Degradation
Free-Wheeling Diode
Hole Trapping
Logic gates
MOSFETs
Power MOSFET
Semiconductor diodes
Silicon carbide
Stress
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Summary:State-of-the-art, commercially available, 4H-SiC MOSFETs are evaluated for stability under high-temperature over-voltage and pulsed over-current conditions. The devices show maximum vulnerability under high-temperature accumulation stress, demonstrating that the gate oxide is more prone to hole trapping than to electron trapping. The power MOSFET architecture coupled with a high interface trap density enables us to predict the stability of the device through a simple evaluation of the free-wheeling diode ideality factor (η) of the unstressed device. The pulsed over-current operation results in degradation similar to electron trapping at high temperature, presumably due to overheating of the device beyond its specified junction temperature. Over-current degradation is more severe at high switching frequency.
ISBN:145771678X
9781457716782
ISSN:1541-7026
1938-1891
DOI:10.1109/IRPS.2012.6241817