Simultaneous Formation of a Metallic Mn Layer and a MnOx/MnSixOy Barrier Layer by Chemical Vapor Deposition at 250 °C

A metallic Mn layer was successfully formed on tetraethylorthosilicate (TEOS)--SiO 2 substrate at the deposition temperature of 250 °C by chemical vapor deposition (CVD) using a newly developed Mn precursor, bis[1-( tert -butylamide)-2-dimethylaminoethane- N , N $\aku '$]manganese. A thin and u...

Full description

Saved in:
Bibliographic Details
Published inJpn J Appl Phys Vol. 52; no. 5; pp. 05FA02 - 05FA02-3
Main Authors Kurokawa, Atsuko, Sutou, Yuji, Koike, Junichi, Hamada, Tatsufumi, Matsumoto, Kenji, Nagai, Hiroyuki, Maekawa, Kaoru, Kanato, Hiroki
Format Journal Article
LanguageEnglish
Published The Japan Society of Applied Physics 25.05.2013
Online AccessGet full text

Cover

More Information
Summary:A metallic Mn layer was successfully formed on tetraethylorthosilicate (TEOS)--SiO 2 substrate at the deposition temperature of 250 °C by chemical vapor deposition (CVD) using a newly developed Mn precursor, bis[1-( tert -butylamide)-2-dimethylaminoethane- N , N $\aku '$]manganese. A thin and uniform Mn oxide layer was simultaneously formed at a CVD-Mn/TEOS--SiO 2 interface, and was partially embedded in the TEOS--SiO 2 . This Mn oxide layer was composed of a bilayer of MnO x and MnSi x O y . After annealing at 400 °C in vacuum for 10 h, the interface Mn oxide layer showed a good barrier property and thermal stability.
Bibliography:XPS spectra of a Mn layer. Cross-sectional TEM images of CVD-Mn/SiO 2 interface of (a) as-deposited sample and (b) additionally annealed sample at 350 °C for 30 min. The location of the interface layer with respect to the initial surface position of the SiO 2 . EELS line profile of the Mn/SiO 2 interface region of as-deposited sample. SIMS depth profile of the sample annealed at 400 °C in vacuum for 10 h.
ISSN:0021-4922
1347-4065
DOI:10.7567/JJAP.52.05FA02