Simultaneous Formation of a Metallic Mn Layer and a MnOx/MnSixOy Barrier Layer by Chemical Vapor Deposition at 250 °C
A metallic Mn layer was successfully formed on tetraethylorthosilicate (TEOS)--SiO 2 substrate at the deposition temperature of 250 °C by chemical vapor deposition (CVD) using a newly developed Mn precursor, bis[1-( tert -butylamide)-2-dimethylaminoethane- N , N $\aku '$]manganese. A thin and u...
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Published in | Jpn J Appl Phys Vol. 52; no. 5; pp. 05FA02 - 05FA02-3 |
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Main Authors | , , , , , , , |
Format | Journal Article |
Language | English |
Published |
The Japan Society of Applied Physics
25.05.2013
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Online Access | Get full text |
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Summary: | A metallic Mn layer was successfully formed on tetraethylorthosilicate (TEOS)--SiO 2 substrate at the deposition temperature of 250 °C by chemical vapor deposition (CVD) using a newly developed Mn precursor, bis[1-( tert -butylamide)-2-dimethylaminoethane- N , N $\aku '$]manganese. A thin and uniform Mn oxide layer was simultaneously formed at a CVD-Mn/TEOS--SiO 2 interface, and was partially embedded in the TEOS--SiO 2 . This Mn oxide layer was composed of a bilayer of MnO x and MnSi x O y . After annealing at 400 °C in vacuum for 10 h, the interface Mn oxide layer showed a good barrier property and thermal stability. |
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Bibliography: | XPS spectra of a Mn layer. Cross-sectional TEM images of CVD-Mn/SiO 2 interface of (a) as-deposited sample and (b) additionally annealed sample at 350 °C for 30 min. The location of the interface layer with respect to the initial surface position of the SiO 2 . EELS line profile of the Mn/SiO 2 interface region of as-deposited sample. SIMS depth profile of the sample annealed at 400 °C in vacuum for 10 h. |
ISSN: | 0021-4922 1347-4065 |
DOI: | 10.7567/JJAP.52.05FA02 |