Effect of Al gate on the electrical behaviour of Al-doped Ta2O5 stacks

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Bibliographic Details
Published inJournal of physics. D, Applied physics Vol. 44; no. 23; p. 235103
Main Authors Skeparovski, A, Novkovski, N, Atanassova, E, Paskaleva, A, Lazarov, V K
Format Journal Article
LanguageEnglish
Published Bristol IOP Publishing 15.06.2011
Institute of Physics
Subjects
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Electrical properties of specific thin films
Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures
Electronic transport in interface structures
Exact sciences and technology
Insulators
Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
Physics
Interfacial layer
MIS structures
Annealing
Stacking sequence
Electrical properties
Doping
Thin films
Interfaces
Trapping
Lamellar structure
Transmission electron microscopy
Electric field effects
Aluminium additions
Nitridation
High field
Logic gates
Permittivity
Current density
MIS capacitors
Double layers
Gates
Hysteresis
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ISSN:0022-3727
1361-6463
DOI:10.1088/0022-3727/44/23/235103