Submicron InP DHBT Technology for High-Speed High-Swing Mixed-Signal ICs

We report on the development of a submicron InP DHBT technology, optimized for the fabrication of ges50-GHz- clock mixed-signal ICs. In-depth study of device geometry and structure has allowed to get the needed performances and yield. Special attention has been paid to critical thermal behavior. Var...

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Bibliographic Details
Published in2008 IEEE Compound Semiconductor Integrated Circuits Symposium pp. 1 - 4
Main Authors Godin, J., Nodjiadjim, V., Riet, M., Berdaguer, P., Drisse, O., Derouin, E., Konczykowska, A., Moulu, J., Dupuy, J.-Y., Jorge, F., Gentner, J.-L., Scavennec, A., Johansen, T., Krozer, V.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.10.2008
Subjects
Bridge circuits
Clocks
Data conversion
DH-HEMTs
Fabrication
Geometry
III-V semiconductor materials
Indium phosphide
Plugs
Thermal resistance
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Summary:We report on the development of a submicron InP DHBT technology, optimized for the fabrication of ges50-GHz- clock mixed-signal ICs. In-depth study of device geometry and structure has allowed to get the needed performances and yield. Special attention has been paid to critical thermal behavior. Various size submicron devices have been modeled using UCSD- HBT equations. These large signal models have allowed the design of 50-GHz clocked 50 G Decision and 100 G Selector circuits. The high quality of the measured characteristics demonstrates the suitability of this technology for the various applications of interest, like 100 Gbit/s transmission.
ISBN:1424419395
9781424419395
ISSN:1550-8781
2374-8443
DOI:10.1109/CSICS.2008.28