Structural and electrical characterization of magnetron sputtered MoO3 thin films

Thin films of molybdenum oxide were deposited on glass and crystalline silicon substrates using dc magnetron sputtering method by sputtering of molybdenum target in the presence of oxygen and argon gas mixture under various oxygen partial pressures in the range 8×10-5 – 8×10-4 mbar. The glow dischar...

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Bibliographic Details
Published inJournal of physics. Conference series Vol. 208; no. 1; p. 012101
Main Authors Nirupama, V, Sekhar, M Chandra, Subramanyam, T K, Uthanna, S
Format Journal Article
LanguageEnglish
Published Bristol IOP Publishing 01.02.2010
Subjects
Argon
Electrical properties
Electrical resistivity
Gas mixtures
Glass substrates
Glow discharges
Heat treating
Magnetron sputtering
Molybdenum
Molybdenum oxides
Molybdenum trioxide
Oxygen
Partial pressure
Physics
Pressure effects
Silicon substrates
Structural analysis
Thin films
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Summary:Thin films of molybdenum oxide were deposited on glass and crystalline silicon substrates using dc magnetron sputtering method by sputtering of molybdenum target in the presence of oxygen and argon gas mixture under various oxygen partial pressures in the range 8×10-5 – 8×10-4 mbar. The glow discharge characteristics of the molybdenum cathode under various oxygen partial pressures were studied. The effect of oxygen partial pressure on the core level binding energy, structure, mechanical and electrical properties of the films was systematically studied. The films formed at oxygen partial pressures < 2×10-4 mbar contained the MoO3 and MoO3-x phases. The films deposited at oxygen partial pressures of 2×10-4 mbar were stoichiometric with single phase orthorhombic α- MoO3. The electrical conductivity of films decreased from 4×10-5 to 1.6×10-6 Ω-1cm-1 with increase of oxygen partial pressure from 8×10-5 to 8×10-4 mbar.
ISSN:1742-6596
1742-6588
1742-6596
DOI:10.1088/1742-6596/208/1/012101