Ultra low energy and area efficient charge pump with automatic clock controller in 65 nm CMOS
A low power CMOS charge pump (CP) is proposed utilizing a new combination of charge transferring switches for a faster start-up, higher efficiency and lower reverse charge sharing. A low cost feedback mechanism observes the output voltage level and automatically switches off the clock after passing...
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Published in | 2015 IEEE Asian Solid-State Circuits Conference (A-SSCC) pp. 1 - 4 |
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Main Authors | , |
Format | Conference Proceeding |
Language | English |
Published |
IEEE
19.01.2016
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Subjects | |
Online Access | Get full text |
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Summary: | A low power CMOS charge pump (CP) is proposed utilizing a new combination of charge transferring switches for a faster start-up, higher efficiency and lower reverse charge sharing. A low cost feedback mechanism observes the output voltage level and automatically switches off the clock after passing a threshold, which reduces energy dissipation by 62%. It is shown that by using one capacitor per stage, the proposed architecture reaches higher voltages compared to the competitive architectures when driving capacitive loads. The design is manufactured in a 65 nm technology, and measurement results confirm a 120% higher voltage compared to the conventional Dickson CP at 400 mV with identical area cost. The measured minimum operating voltage and highest charge pumping efficiency are 290 mV and 86%, respectively. |
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DOI: | 10.1109/ASSCC.2015.7387491 |