Technology of mixed amorphous As2(Sx Se1-x)3 from chemical solutions and their optical properties
Thin layers of amorphous chalcogenides semiconductors of mixed composition As2(SxSe1‐x)3 for x in the interval 0–1 were obtained from chemical solutions of amorphous compounds arsenic selenide (As2Se3) and arsenic sulfide (As2S2). Their optical properties (optical transmittance and recording of holo...
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Published in | Physica status solidi. C Vol. 8; no. 9; pp. 2717 - 2720 |
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Main Authors | , , |
Format | Journal Article |
Language | English |
Published |
Berlin
WILEY-VCH Verlag
01.09.2011
WILEY‐VCH Verlag |
Subjects | |
Online Access | Get full text |
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Summary: | Thin layers of amorphous chalcogenides semiconductors of mixed composition As2(SxSe1‐x)3 for x in the interval 0–1 were obtained from chemical solutions of amorphous compounds arsenic selenide (As2Se3) and arsenic sulfide (As2S2). Their optical properties (optical transmittance and recording of holographic information) were studied. The photodarkening of layers and shift of absorption edge in infrared (IR) area of spectra were found at ultra‐violet (UV) and actinic irradiations. Maximum efficiency of holographic writing of diffraction gratings (with Ar laser recording, λ = 488 nm) on thin layers is 2.5% and after additional processing in the negative etching is 36% (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim) |
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Bibliography: | ark:/67375/WNG-5VD02XKT-V Supreme Council for Science and Technological Development of the Academy of Sciences of Moldova - No. 06.408.012F framework of the National Programme "Nanotehnologies and nanomaterials" - No. 09.836.05.01A istex:002CD1843249A1D2AC96634233B85490D111C973 ArticleID:PSSC201084142 ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23 |
ISSN: | 1862-6351 1610-1642 1610-1642 |
DOI: | 10.1002/pssc.201084142 |