Low-Voltage and High-Speed Voltage-Controlled Ring Oscillator with Wide Tuning Range in 0.18 μm Complementary Metal Oxide Semiconductor
A new complementary metal oxide semiconductor (CMOS) differential delay cell for a voltage-controlled ring oscillator with a wide tuning range and high speed is proposed in this paper. The new differential delay cell employing a complementary current control scheme can increase not only the control...
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| Published in | Jpn J Appl Phys Vol. 50; no. 4; pp. 04DE11 - 04DE11-6 |
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| Main Authors | , , |
| Format | Journal Article |
| Language | English |
| Published |
The Japan Society of Applied Physics
01.04.2011
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| Online Access | Get full text |
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| Summary: | A new complementary metal oxide semiconductor (CMOS) differential delay cell for a voltage-controlled ring oscillator with a wide tuning range and high speed is proposed in this paper. The new differential delay cell employing a complementary current control scheme can increase not only the control voltage range but also the operation frequency in low-voltage operation. Using the new delay cells, a ring voltage-controlled oscillator employing a three-stage structure and multiple-pass loop techniques is implemented in the 0.18 μm single-poly--six-metal (1P6M) CMOS process at a 1.8 V supply voltage to achieve a wide tuning range and high speed. Measured results show that a wide operation frequency range from 8.36 to 1.29 GHz is accomplished for the full-range control voltages from 0 to 1.8 V. When the supply voltage is 1 V, the operation frequencies are from 4.09 to 0.479 GHz for the full-range control voltages from 0 to 1 V. The measured phase noise is $-100.22$ dBc/Hz at 1 MHz offset from the 8.35 GHz center frequency and the figure of merit (FOM) is $-159.95$ dBc/Hz. The chip core area without PAD is $106\times 76.2$ μm 2 . |
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| Bibliography: | V$--$F$ characteristic curves for different supply voltages. Improved $V$--$F$ characteristic curves: (a) reference delay cell in ref. (b) new delay cell. Overall structure of the three-stage multiple-pass loop ring oscillator. Proposed new differential delay cell. First-order equivalent circuit model of the proposed delay cell. Photograph of chip of the proposed VCRO. Measured and simulated tuning ranges of VCRO for different supply voltages. Measured output spectrum of VCRO with output power of $-7.93$ dBm at center frequency of 8.35 GHz. Measured phase noise of VCRO at center frequency of 8.35 GHz. Measured output spectrum of VCRO with output power of $-16.11$ dBm at center frequency of 4.09 GHz. Measured phase noise of VCRO at center frequency of 4.09 GHz. Measured and simulated phase noises of VCRO for different supply voltages. Measured and simulated DCs of VCRO for different supply voltages. Measured and simulated FOMs of VCRO for different supply voltages. |
| ISSN: | 0021-4922 1347-4065 |
| DOI: | 10.1143/JJAP.50.04DE11 |