(Invited) Room Temperature Ferromagnetism Induced by Electric Field in Cobalt-Doped TiO2

Electric field induced ferromagnetism at room temperature in cobalt-doped titanium dioxide was demonstrated by means of electric double layer transistor. This result represents that a carrier-mediated exchange coupling plays a principal role in the high temperature ferromagnetism in this compound. A...

Full description

Saved in:
Bibliographic Details
Published inECS transactions Vol. 50; no. 4; pp. 53 - 57
Main Authors Fukumura, Tomoteru, Yamada, Yoshinori, Ueno, Kazunori, Yuan, Hongtao, Shimotani, Hidekazu, Iwasa, Yoshihiro, Gu, Lin, Tsukimoto, Susumu, Ikuhara, Yuichi, Kawasaki, Masashi
Format Journal Article
LanguageEnglish
Published The Electrochemical Society, Inc 15.03.2013
Online AccessGet full text

Cover

Loading…
More Information
Summary:Electric field induced ferromagnetism at room temperature in cobalt-doped titanium dioxide was demonstrated by means of electric double layer transistor. This result represents that a carrier-mediated exchange coupling plays a principal role in the high temperature ferromagnetism in this compound. Accordingly, this compound is a promising material for room temperature semiconductor spintronics.
ISSN:1938-5862
1938-6737
DOI:10.1149/05004.0053ecst