Charge Trapping Characterization of LaLuO3/p-Si Interfaces at Cryogenic Temperatures

The paper focuses on the experimental investigation of charge trapping and emission from shallow traps in the transition layer of the LaLuO3/p-Si structures in the temperature range 6-40K. The techniques of thermally activated charge release, isothermal transient emission currents were used to chara...

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Published inECS transactions Vol. 61; no. 2; pp. 55 - 59
Main Authors Tyagulskyy, Igor Petrovitch, Tiagulskyi, Stanislav Igorovitch, Nazarov, Aleksey Nickolaevitch, Lysenko, Vladimir Sergeevitch, Hurley, P. K., Cherkaoui, K., Monaghan, S.
Format Journal Article
LanguageEnglish
Published The Electrochemical Society, Inc 01.01.2014
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Summary:The paper focuses on the experimental investigation of charge trapping and emission from shallow traps in the transition layer of the LaLuO3/p-Si structures in the temperature range 6-40K. The techniques of thermally activated charge release, isothermal transient emission currents were used to characterize shallow holetraps. Activation energies and densities of shallow hole traps have been determined.
ISSN:1938-5862
1938-6737
DOI:10.1149/06102.0055ecst