Suppression of self-heating effect employing bulk vertical-channel bipolar junction transistor (BJT) type capacitorless 1T-DRAM cell

Excellent thermal characteristics of the bulk vertical-channel bipor junction transistor (BJT) type 1T-DRAM compared to the SOI planar type with 20nm generation. The bulk vertical type can operate with the low increase of lattice temperature (ΔT L max ) of 26K and high enough read current margin of...

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Bibliographic Details
Published in2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S) pp. 1 - 2
Main Authors Imamoto, Takuya, Endoh, Tetsuo
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.10.2013
Subjects
Junctions
Lattices
Logic gates
MOSFET
Random access memory
Silicon-on-insulator
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Summary:Excellent thermal characteristics of the bulk vertical-channel bipor junction transistor (BJT) type 1T-DRAM compared to the SOI planar type with 20nm generation. The bulk vertical type can operate with the low increase of lattice temperature (ΔT L max ) of 26K and high enough read current margin of 1.8μA/cell, while the SOI planar type shows large ΔT L max value of 58K.
ISSN:1078-621X
2577-2295
DOI:10.1109/S3S.2013.6716574