Investigation of connecting techniques for high temperature application on power modules

Recently, there have been many developments on power devices to improve their functions. Especially, the junction temperature of power modules that equip SiC (Silicon Carbide) chips will be higher than 200 °C as current densities are too high, and new electronic packaging technologies shall be devel...

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Bibliographic Details
Published in2016 International Conference on Electronics Packaging (ICEP) pp. 378 - 381
Main Authors Kawashiro, Fumiyoshi, Endo, Yoshiki, Tonedachi, Tatsuo, Nishikawa, Hiroshi
Format Conference Proceeding
LanguageEnglish
Published The Japan Institute of Electronics Packaging 01.04.2016
Subjects
Al ribbon
Bonding
Connectors
Cu connector
Cu ribbon
Cu wire
Electrical resistance measurement
high reliability
Power device
Reliability
Resistance
Substrates
Wires
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Summary:Recently, there have been many developments on power devices to improve their functions. Especially, the junction temperature of power modules that equip SiC (Silicon Carbide) chips will be higher than 200 °C as current densities are too high, and new electronic packaging technologies shall be developed to meet higher temperature and higher power cycle durability requirements. In order to meet these requirements, in the present study, we propose Cu wire, Cu ribbon and Cu connector between Cu wirings of the substrates and investigate their feasibilities, including electrical resistances, footprints of bonding area, and bonding reliability under accelerated stress test, respectively.
DOI:10.1109/ICEP.2016.7486851