Opportunity of single atom control for quantum processing in silicon and diamond

Future CMOS will require the placement of dopants in a predetermined location, namely, a single atom control. Deterministic doping method, i.e. single-ion implantation, realizes ordered arrays of single-atoms in silicon, diamond and other materials, which might provide opportunities to single-dopant...

Full description

Saved in:
Bibliographic Details
Published in2014 Silicon Nanoelectronics Workshop (SNW) pp. 1 - 2
Main Authors Shinada, Takahiro, Enrico, Prati, Tamura, Syuto, Tanii, Takashi, Teraji, Tokuyuki, Onoda, Shinobu, Ohshima, Takeshi, McGuinness, Liam P., Rogers, Lachlan, Naydenov, Boris, Jelezko, Fedor, Isoya, Junichi
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.06.2014
Subjects
Diamonds
Doping
Ion implantation
Ions
Photonics
Silicon
Transistors
Online AccessGet full text

Cover

More Information
Summary:Future CMOS will require the placement of dopants in a predetermined location, namely, a single atom control. Deterministic doping method, i.e. single-ion implantation, realizes ordered arrays of single-atoms in silicon, diamond and other materials, which might provide opportunities to single-dopant transport or single-photon source beneficial to quantum processing.
ISBN:9781479956760
1479956767
DOI:10.1109/SNW.2014.7348533