Communication-Silicon Narrow-Band Solar-Blind Ultraviolet Detector Based on Ag-SiO2-Si Capacitor

• Published in: ECS journal of solid state science and technology Vol. 6; no. 8; pp. Q77 - Q78
• Main Authors: Malik, Oleksandr, la Hidalga-Wade, Francisco Javier De
• Format: Journal Article
• Language: English
• Published: The Electrochemical Society 01.01.2017
• ISSN: 2162-8769
• DOI: 10.1149/2.0081708jss

Solar-blind narrow-band silicon ultraviolet photodetectors based on metal-oxide-semiconductor (MOS) capacitors with silver gate are presented. A very high selectivity was obtained using silver as the band-pass filter. An optimal relationship between the layer and silver film thicknesses was found to obtain a spectral response with a bandwidth of 20 nm at 320 nm and four/five orders rejection factor for the rest of the spectrum. Capacitors operate in non-equilibrium inversion mode that allows to obtaining an internal amplification of photocurrent, up to106, for a weak input optical signal due to a time compression between the charge storage and readout operating modes.