Deep Electron Traps Responsible for Higher Quantum Efficiency in Improved GaN/InGaN Light Emitting Diodes Embedded with SiO2 Nanoparticles

Deep traps spectra are compared for GaN/InGaN light emitting diodes with and without a template embedded with SiO2 nanoparticles underlying the active multiple quantum well region. The structures with SiO2 nanoparticles show a higher internal quantum efficiency which correlates with a lower concentr...

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Published inECS journal of solid state science and technology Vol. 5; no. 10; pp. Q274 - Q277
Main Authors Polyakov, A. Y., Smirnov, N. B., Yakimov, E. B., Cho, Han-Su, Baek, Jong Hyeob, Turutin, A. V., Shemerov, I. V., Kondratyev, E. S., Lee, In-Hwan
Format Journal Article
LanguageEnglish
Published The Electrochemical Society 01.01.2016
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Summary:Deep traps spectra are compared for GaN/InGaN light emitting diodes with and without a template embedded with SiO2 nanoparticles underlying the active multiple quantum well region. The structures with SiO2 nanoparticles show a higher internal quantum efficiency which correlates with a lower concentration of deep traps with level near Ec-0.6 eV as compared to reference structures. We discuss complications in deep traps analysis coming from the freeze-out of Mg acceptors and the choice of proper biasing conditions for deep traps spectra analysis.
Bibliography:0051612JSS
ISSN:2162-8769
DOI:10.1149/2.0051612jss