DIELECTRIC PROPERTIES OF ZnBo DOPED (Ba,Sr)TiO3 CERAMICS FOR THE LOW TEMPERATURE SINTERING PROCESS

• Published in: Integrated ferroelectrics Vol. 110; no. 1; pp. 17 - 24
• Main Authors: KIM, SE-HO, KOH, JUNG-HYUK
• Format: Journal Article
• Language: English
• Published: Taylor & Francis Group 04.12.2009
• Subjects: BaSrTiO; Low temperature co-fired ceramics; relative dielectric permittivity dielectric loss; ZnBO
• ISSN: 1058-4587; 1607-8489
• DOI: 10.1080/10584580903435273

ZnBO sintering aid was added to the (Ba,Sr)TiO 3 ceramics for the LTCCs(Low Temperature Co-fired Ceramics) applications. Recently, low temperature sintering process has been widely investigated for the integrated electronic modules. However, the sintering temperature of (Ba,Sr)TiO 3 ceramic materials are too high to apply the internal electrode materials, which have low melting point. Therefore, the high sintering temperature of (Ba,Sr)TiO 3 ceramic materials needs to be reduced for LTCCs applications. In this paper, we have added 1∼5 wt% ZnBO to (Ba,Sr)TiO 3 . ZnBO doped (Ba,Sr)TiO 3 ceramics were respectively sintered from 750 to 1350°C by 50°C to confirm the sintering temperature with different dopants. The sintering temperature of 5 wt% ZnBO doped (Ba,Sr)TiO 3 ceramics was reduced down to 1100°C. From the XRD analysis, ZnBO doped (Ba,Sr)TiO 3 has no pyro phase. By adding ZnBO dopants to (Ba,Sr)TiO 3 ceramics, both of relative dielectric permittivity and loss tangent were decreased. From the frequency dispersion of dielectric properties, the relative dielectric permittivity and loss tangent of 5 wt% ZnBO doped (Ba,Sr)TiO 3 were 1180 and 3.3×10 −3 , while those of BST were 1585 and 4.8 × 10 −3 , respectively.