Desorption of Ge Species during Thermal Oxidation of Ge and Annealing of HfO2/GeO2 Stacks

Thermal stability of HfO2/GeO2 stacks was investigated. These structures were stable on Si up to 600 oC following annealing in N2. Samples prepared on Ge yielded direct evidence of migration and loss of both Ge and O. This contrasting behavior is a result of GeO formation at the GeO2/Ge interface. D...

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Published inECS transactions Vol. 45; no. 4; pp. 137 - 144
Main Authors Radtke, Cláudio, Rolim, Guilherme K., Da Silva, Samoel R.M., Soares, Gabriel V., Krug, Cristiano, Baumvol, Israel J.R.
Format Journal Article
LanguageEnglish
Published The Electrochemical Society, Inc 01.01.2012
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Summary:Thermal stability of HfO2/GeO2 stacks was investigated. These structures were stable on Si up to 600 oC following annealing in N2. Samples prepared on Ge yielded direct evidence of migration and loss of both Ge and O. This contrasting behavior is a result of GeO formation at the GeO2/Ge interface. Desorption of Ge was also observed during thermal oxidation of this semiconductor. The amounts of desorbed Ge were related to the oxygen pressure. Oxygen isotopic tracing results evidenced a strong interaction of oxygen from the gas phase with the already formed GeO2 layer.
ISSN:1938-5862
1938-6737
DOI:10.1149/1.3700462