Atomic Layer Deposition of GeO2 Thin Films on Si(100) using Ge(N,NꞋ-R,R-en)(NMe2)2 (Where R = Isopropyl and t-Butyl) Precursors

KCI Citation Count: 2

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Bibliographic Details
Published inBulletin of the Korean Chemical Society Vol. 36; no. 8; pp. 1953 - 1954
Main Authors Jung, Jae-Sun, Kim, Dae-Hyun, Shin, Jin-Ho, Kang, Jun-Gill
Format Journal Article
LanguageEnglish
Published Weinheim Wiley-VCH Verlag GmbH & Co. KGaA 01.08.2015
Wiley‐VCH Verlag GmbH & Co. KGaA
대한화학회
Subjects
Atomic layer deposition
Ge(IV) precursor
GeO2 thin film
Growth rate
화학
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Summary:KCI Citation Count: 2
Bibliography:ArticleID:BKCS10400
ark:/67375/WNG-PW7Z6G4C-0
istex:C9C4C5D6092ACD905AD1B77BC1FDE0DEA1D53947
G704-000067.2015.36.8.008
http://onlinelibrary.wiley.com/doi/10.1002/bkcs.10400/abstract
ISSN:1229-5949
0253-2964
1229-5949
DOI:10.1002/bkcs.10400