Carrier injection property of C60 thin film transistor via displacement current measurement

Carrier injection into a C60 thin film has been studied from characteristics of a field effect transistor and a displacement current measurement (DCM) using three kinds of metals, Mg, Ag, and Au. The Mg sample shows a highest field effect mobility of 0.62 cm2/Vs and a lowest threshold voltage of 6 V...

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Bibliographic Details
Published inJournal of physics. Conference series Vol. 159; no. 1; p. 012014
Main Authors Aoki, N, Chiba, Y, Chen, S-R, Tsuji, H, Ueno, M, Ogawa, K, Bird, J P, Ochiai, Y
Format Journal Article
LanguageEnglish
Published Bristol IOP Publishing 01.04.2009
Subjects
Carrier injection
Current carriers
Diffusion layers
Field effect transistors
Gold
Magnesium
Physics
Semiconductor devices
Silver
Thin films
Threshold voltage
Transistors
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Summary:Carrier injection into a C60 thin film has been studied from characteristics of a field effect transistor and a displacement current measurement (DCM) using three kinds of metals, Mg, Ag, and Au. The Mg sample shows a highest field effect mobility of 0.62 cm2/Vs and a lowest threshold voltage of 6 V among the samples. A carrier injection and the accumulation are confirmed in the DCM curves by sweeping voltage applied on the back gate. The electron number and the density injected from the electrodes are estimated from the integration of the DCM curves. However, only the curve of the Mg sample shows a two-stage transition in the DCM curves. It could be due to a diffusion of Mg atoms into the C60 layer and a transition of releasing electrons from the donor level could be observed at lower voltage region.
ISSN:1742-6596
1742-6588
1742-6596
DOI:10.1088/1742-6596/159/1/012014