Finite Element Model in LTspice of a Distributed RC-Structure Fractional-Order Capacitor Device

Fractional-order capacitors can potentially be fabricated using MOS technologies taking advantage of their distributed resistive-capacitive structure. However, there are limited models to simulate the characteristics of these designs. In this work, an equivalent circuit model to represent a finite-e...

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Bibliographic Details
Published inProceedings of IEEE Southeastcon pp. 1494 - 1500
Main Authors Prokup, Lauryn A., Kubanek, David, Freeborn, Todd J.
Format Conference Proceeding
LanguageEnglish
Published IEEE 22.03.2025
Subjects
Capacitors
Circuits and systems
Design methodology
Equivalent circuits
Finite element analysis
Integrated circuit modeling
Logic gates
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Summary:Fractional-order capacitors can potentially be fabricated using MOS technologies taking advantage of their distributed resistive-capacitive structure. However, there are limited models to simulate the characteristics of these designs. In this work, an equivalent circuit model to represent a finite-element of a MOS structure is used to assemble a hierarchical model of a complete design in LTspice. This equivalent circuit model is validated (for designs with phases of -77°, -74°, -58°, and -53° with a maximum of ±2° tolerance) against previously established matrix model representations. Using this validated model varying gate length connections (from 100% to 6.25%) caused deviations less than 0.25° supporting that this characteristic of MOS technologies is not likely to have a significant effect on fabricated designs.
ISSN:1558-058X
DOI:10.1109/SoutheastCon56624.2025.10971518