Tunable charge transport properties in non-stoichiometric SrIrO3 thin films

• Published in: Journal of physics. Condensed matter Vol. 36; no. 42
• Main Authors: Suresh, Sreya, Sadhu, Sai Pavan Prashanth, Mishra, Vikash, Paulus, Werner, Ramachandra Rao, M S
• Format: Journal Article
• Language: English
• Published: England IOP Publishing 23.10.2024
• Subjects: electron correlation; electronic bandwidth; oxygen vacancy; spin-orbit coupling; SrIrO; Spin-orbit coupling; electronic bandwidth; oxygen vacancy; electron correlation; SrIrO3
• ISSN: 0953-8984; 1361-648X
• DOI: 10.1088/1361-648X/ad6111

Delving into the intricate interplay between spin-orbit coupling and Coulomb correlations in strongly correlated oxides, particularly perovskite compounds, has unveiled a rich landscape of exotic phenomena ranging from unconventional superconductivity to the emergence of topological phases. In this study, we have employed pulsed laser deposition (PLD) technique to grow SrIrO3 (SIO) thin films on SrTiO3 substrates, systematically varying the oxygen content during the post-deposition annealing. X-ray Photoelectron Spectroscopy (XPS) provided insights into the stoichiometry and spin-orbit splitting energy of Iridium within the SIO film, while high-resolution X-ray studies meticulously examined the structural integrity of the thin films. Remarkably, our findings indicate a decrease in the metallicity of SIO thin films with reduced annealing O2 partial pressure. Furthermore, we carried out magneto-transport studies on the SIO thin films, the results revealed intriguing insights into spin transport as a function of oxygen content. The tunability of the electronic band structure of SrIrO3 films with varying oxygen vacancy is correlated with the DFT calculations. Our findings elucidate the intricate mechanisms dictating spin transport properties in SrIrO3 thin films, offering invaluable guidance for the design and optimization of spintronic devices based on complex oxide materials. Notably, the ability to tune bandwidth by varying post-annealing oxygen partial pressure in iridate-based spintronic materials holds significant promise for advancing technological applications in the spintronics domain.&#xD.