Dynamic Behavior of Threshold Voltage and ID-VDS Kink in AlGaN/GaN HEMTs Due to Poole-Frenkel Effect

The kink effect in field-effect transistors (FETs) consists in a sudden increase in drain current, <inline-formula> <tex-math notation="LaTeX">{I}_{\text {D}} </tex-math></inline-formula>, during a drain voltage sweep and leading to a higher <inline-formula> &...

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Published inIEEE transactions on electron devices Vol. 70; no. 12; pp. 6256 - 6261
Main Authors Gao, Zhan, De Santi, Carlo, Rampazzo, Fabiana, Saro, Marco, Fornasier, Mirko, Meneghesso, Gaudenzio, Meneghini, Matteo, Chini, Alessandro, Verzellesi, Giovanni, Zanoni, Enrico
Format Journal Article
LanguageEnglish
Published IEEE 01.12.2023
Subjects
Current collapse
Current measurement
deep levels
GaN HEMT
GaN reliability
HEMTs
kink effect
MODFETs
Semiconductor device measurement
Stress
Transient analysis
Voltage measurement
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Summary:The kink effect in field-effect transistors (FETs) consists in a sudden increase in drain current, <inline-formula> <tex-math notation="LaTeX">{I}_{\text {D}} </tex-math></inline-formula>, during a drain voltage sweep and leading to a higher <inline-formula> <tex-math notation="LaTeX">{I}_{\text {D}} </tex-math></inline-formula> saturation value. We report new experimental data concerning the dynamic behavior of the "kink" in AlGaN/GaN HEMTs and correlate them with deep levels. The results demonstrate the role of the Poole-Frenkel effect in determining the occurrence of the kink and identify the experimental conditions that make it observable.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2023.3326781