A Physics-based Analytical Model for Ballistic InSe Nanotransistors

This paper presents a physics-based model for ballistic field-effect nanotransistors, focusing on devices based on a two-dimensional indium selenide (InSe) channel. Through an analytical solution of the Poisson equation and making use of the Landauer formalism, we derive concise expressions for curr...

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Bibliographic Details
Published inProceedings of the ... IEEE Conference on Nanotechnology pp. 185 - 190
Main Authors de Souza, Adelcio M., Celino, Daniel R., Ragi, Regiane, Romero, Murilo A.
Format Conference Proceeding
LanguageEnglish
Published IEEE 08.07.2024
Subjects
Analytical models
Capacitance-voltage characteristics
Multichip modules
Numerical simulation
Performance evaluation
Poisson equations
Silicon
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ISSN1944-9380
DOI10.1109/NANO61778.2024.10628708

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Summary:This paper presents a physics-based model for ballistic field-effect nanotransistors, focusing on devices based on a two-dimensional indium selenide (InSe) channel. Through an analytical solution of the Poisson equation and making use of the Landauer formalism, we derive concise expressions for current-voltage (1- V) and capacitance-voltage (C- V) characteristics. Validation of the resulting curves is performed against numerical simulations and experimental data, demonstrating an excellent agreement.
ISSN:1944-9380
DOI:10.1109/NANO61778.2024.10628708