Q Cells Q.Antum Neo Technology with > 25% Conversion Efficiency Applying Mass-Production Processes

Within the last 3 years Q CELLS has developed its Q.ANTUM NEO technology based on a passivating contact solar cell and has transferred this technology to mass production. With a very lean and cost-effective process flow a conversion efficiency of 25.2 % has been demonstrated with this solar cell con...

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Bibliographic Details
Published in2023 IEEE 50th Photovoltaic Specialists Conference (PVSC) pp. 1 - 3
Main Authors Junghanel, Matthias, Hoger, Ingmar, Schaper, Martin, Petter, Kai, Jarzembowski, Enrico, Klenke, Christian, Weihrauch, Anika, Schley, Michael, Ploigt, Hans-Christoph, Kwon, Ohjin, Schonmann, Antje, Tobail, Osama, Schwabedissen, Axel, Kauert, Maximilian, Duncker, Klaus, Honig, Rene, Cieslak, Janko, Hornlein, Stefan, Stenzel, Florian, Faulwetter-Quandt, Bjorn, Scharf, Jessica, Kersten, Friederike, Ke, Cangming, Kristensen, Sissel Tind, Baer, Carsten, Queck, Martina, Zimmermann, Gregor, Kohler, Matthias, Lampa, Nicole, Pohl-Hampel, Britta, Burtone, Lorenzo, Niebergall, Larissa, Schutze, Matthias, Schulz, Susanne, Peters, Stefan, Mette, Ansgar, Fertig, Fabian, Fischer, Markus, Muller, Jorg W.
Format Conference Proceeding
LanguageEnglish
Published IEEE 11.06.2023
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Summary:Within the last 3 years Q CELLS has developed its Q.ANTUM NEO technology based on a passivating contact solar cell and has transferred this technology to mass production. With a very lean and cost-effective process flow a conversion efficiency of 25.2 % has been demonstrated with this solar cell concept while average pilot line efficiency is currently at 24.7 % with a steep learning curve. This enables a high module power output of 444 W (132 half cells M6) corresponding to a module efficiency of 23.9 % on aperture area. The cell structure features a solar cell with passivating contacts on the rear side, double-sided screen-printed metal contacts, a module-optimized anti-reflective coating (ARC) and a homogeneous front-side emitter on a n -type silicon substrate.
DOI:10.1109/PVSC48320.2023.10360023