Hertz-level-linewidth semiconductor laser via injection locking to an ultra-high Q silicon nitride microresonator
A conventional semiconductor DFB laser is self-injection-locked to a CMOS-foundryfabricated ultra-high Q silicon nitride microresonator, suppressing high-offset frequency noise to 0.2 Hz 2 Hz -1 and yielding instantaneous linewidth of 1.2 Hz.
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Published in | 2021 Conference on Lasers and Electro-Optics (CLEO) pp. 1 - 2 |
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Main Authors | , , , , , , , , , , , |
Format | Conference Proceeding |
Language | English |
Published |
OSA
01.05.2021
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Subjects | |
Online Access | Get full text |
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Summary: | A conventional semiconductor DFB laser is self-injection-locked to a CMOS-foundryfabricated ultra-high Q silicon nitride microresonator, suppressing high-offset frequency noise to 0.2 Hz 2 Hz -1 and yielding instantaneous linewidth of 1.2 Hz. |
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