Hertz-level-linewidth semiconductor laser via injection locking to an ultra-high Q silicon nitride microresonator

A conventional semiconductor DFB laser is self-injection-locked to a CMOS-foundryfabricated ultra-high Q silicon nitride microresonator, suppressing high-offset frequency noise to 0.2 Hz 2 Hz -1 and yielding instantaneous linewidth of 1.2 Hz.

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Bibliographic Details
Published in2021 Conference on Lasers and Electro-Optics (CLEO) pp. 1 - 2
Main Authors Jin, Warren, Yang, Qi-Fan, Chang, Lin, Shen, Boqiang, Wang, Heming, Leal, Mark A., Wu, Lue, Gao, Maodong, Feshali, Avi, Paniccia, Mario, Vahala, Kerry J., Bowers, John E.
Format Conference Proceeding
LanguageEnglish
Published OSA 01.05.2021
Subjects
(130.3120) Integrated optics devices
(140.3945) Microcavities
Injection-locked oscillators
Integrated optics
Laser noise
Lasers and electrooptics
Microcavities
Semiconductor lasers
Silicon nitride
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Summary:A conventional semiconductor DFB laser is self-injection-locked to a CMOS-foundryfabricated ultra-high Q silicon nitride microresonator, suppressing high-offset frequency noise to 0.2 Hz 2 Hz -1 and yielding instantaneous linewidth of 1.2 Hz.