Integration of dense CNTs in vias on 200mm diameter wafers: Study of post CNT growth processes

This paper presents the integration of dense (2.5 10 12 CNTs/cm 2 ) Carbon Nanotubes in via structures for future microelectronic interconnects generations. Process steps performed after CNT growth in vias are studied. Two different CNT encapsulation layers are evaluated (ALD Al 2 O 3 and spin on re...

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Published in2011 IEEE International Interconnect Technology Conference pp. 1 - 3
Main Authors Fayolle, M., Lugand, J. F., Kachtouli, R., Okuno, H., Dijon, J., Gautier, P., Billon, T.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.05.2011
Subjects
Aluminum oxide
Copper
Encapsulation
Resists
Silicon
Surface topography
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Summary:This paper presents the integration of dense (2.5 10 12 CNTs/cm 2 ) Carbon Nanotubes in via structures for future microelectronic interconnects generations. Process steps performed after CNT growth in vias are studied. Two different CNT encapsulation layers are evaluated (ALD Al 2 O 3 and spin on resist). After polishing, well planarized CNTs vias structures are obtained in both cases. Post CMP clean is performed to improve CNT/top metal contact. Top metal realisation is on-going and electrical results will help to select which encapsulation is the best.
ISBN:9781457705038
1457705036
ISSN:2380-632X
2380-6338
DOI:10.1109/IITC.2011.5940269