Improved trap-related characteristics on SiNx/AlGaN/GaN MISHEMTs with surface treatment

In this paper, the reliable SiN x /AlGaN/GaN MISHEMTs on silicon substrate with improved trap-related characteristics have been well demonstrated. The devices with our proposed treatment method showed less deep-level traps and more Si surface donors at SiN x -AlGaN interface. The trap related device...

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Published in2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD) pp. 293 - 296
Main Authors Yu-Syuan Lin, King-Yuen Wong, Lansbergen, G. P., Yu, J. L., Yu, C. J., Hsiung, C. W., Chiu, H. C., Liu, S. D., Chen, P. C., Yao, F. W., Su, R. Y., Chou, C. Y., Tsai, C. Y., Yang, F. J., Tsai, C. L., Tsai, C. S., Chen, X., Tuan, H. C., Kalnitsky, Alex
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.06.2014
Subjects
Aluminum gallium nitride
Dielectrics
Gallium nitride
Logic gates
Silicon
Stress
Surface treatment
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Summary:In this paper, the reliable SiN x /AlGaN/GaN MISHEMTs on silicon substrate with improved trap-related characteristics have been well demonstrated. The devices with our proposed treatment method showed less deep-level traps and more Si surface donors at SiN x -AlGaN interface. The trap related device characteristics are also improved by using our optimized treatment method. The devices with proposed treatment method exhibit less current collapse and better positive bias temperature stability of threshold voltage. All the results suggest that the proposed treatment method is very effective to improve the slow-trap related device reliability.
ISBN:9781479929177
1479929174
ISSN:1063-6854
1946-0201
DOI:10.1109/ISPSD.2014.6856034