A leakage current model for SOI based floating body memory that includes the Poole-Frenkel effect

The leakage current of SOI based Floating Body Memory (FBM) has been modeled. The model takes into account oxide/SOI interface traps (D it ) and Electric Field Enhanced (EFE) generation of electron hole pairs (EHPs) from trap states via the Poole-Frenkel Effect (PFE). This model has been used to imp...

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Bibliographic Details
Published in2008 IEEE International SOI Conference pp. 75 - 76
Main Authors Nayfeh, A., Koldyaev, V., Beaud, P., Nagoga, M., Okhonin, S.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.10.2008
Subjects
Charge pumps
Electric fields
Leakage current
Logic gates
Radiative recombination
Silicon
Transistors
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Summary:The leakage current of SOI based Floating Body Memory (FBM) has been modeled. The model takes into account oxide/SOI interface traps (D it ) and Electric Field Enhanced (EFE) generation of electron hole pairs (EHPs) from trap states via the Poole-Frenkel Effect (PFE). This model has been used to improve the retention time of Z-RAM by a reduction of both D it and electric field. It can also be extended to SOI based low power devices.
ISBN:1424419549
9781424419548
ISSN:1078-621X
2577-2295
DOI:10.1109/SOI.2008.4656301