RTN and PBTI-induced time-dependent variability of replacement metal-gate high-k InGaAs FinFETs

We study RTN and PBTI in nanoscale InGaAs FinFETs fabricated on 300mm Si wafers. The average instability is found to be comparable to planar structures, but significantly larger when compared to Si devices. Although the novel devices follow the same time-dependent variability statistics and the corr...

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Bibliographic Details
Published in2014 IEEE International Electron Devices Meeting pp. 20.2.1 - 20.2.4
Main Authors Franco, J., Kaczer, B., Waldron, N., Roussel, J., Alian, A., Pourghaderi, M. A., Ji, Z., Grasser, T., Kauerauf, T., Sioncke, S., Collaert, N., Thean, A., Groeseneken, G.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.12.2014
Subjects
Aluminum oxide
FinFETs
Hysteresis
Indium gallium arsenide
Logic gates
Nanoscale devices
Silicon
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Summary:We study RTN and PBTI in nanoscale InGaAs FinFETs fabricated on 300mm Si wafers. The average instability is found to be comparable to planar structures, but significantly larger when compared to Si devices. Although the novel devices follow the same time-dependent variability statistics and the corresponding area-scaling as their Si counterparts, a larger stochastic impact of single defects on the device characteristic is found to induce larger aging-related variance. We ascribe this to a more percolative channel conduction induced by still excessive interface and channel defectivity.
ISSN:0163-1918
2156-017X
DOI:10.1109/IEDM.2014.7047087