Design considerations for GaN based MMICs

Select considerations related to gallium nitride (GaN) based MMIC design are discussed. The unique properties of this material pose challenges to IC designers not typically encountered in gallium arsenide (GaAs) based technology. Specific examples of how some of these issues impact circuit design ar...

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Bibliographic Details
Published in2009 IEEE International Conference on Microwaves, Communications, Antennas and Electronics Systems pp. 1 - 8
Main Authors Campbell, C.F., Dumka, D.C., Ming-Yih Kao
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.11.2009
Subjects
Broadband amplifiers
Capacitors
Class-E power amplifiers
control components
Gallium arsenide
Gallium nitride
High power amplifiers
MMICs
Power amplifiers
Power generation
Switches
Switching circuits
wideband power amplifiers
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Summary:Select considerations related to gallium nitride (GaN) based MMIC design are discussed. The unique properties of this material pose challenges to IC designers not typically encountered in gallium arsenide (GaAs) based technology. Specific examples of how some of these issues impact circuit design are discussed for wideband power amplifiers, high efficiency class-E power amplifiers and high power switching transistors.
ISBN:9781424439850
142443985X
DOI:10.1109/COMCAS.2009.5386036