ALD Ta2O5 and Hf-doped Ta2O5 for BEOL compatible MIM

Decoupling MIM capacitors are typically implemented to reduce power supply noise. In this work we reported characterization of Atomic Layer Deposited (ALD) Ta 2 O 5 and Hf-doped Ta 2 O 5 high-k MIM capacitors. We investigated the impact of precursor choice and HfO 2 addition on material, electrical...

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Bibliographic Details
Published in2014 IEEE International Conference on IC Design & Technology pp. 1 - 4
Main Authors Triyoso, D. H., Weinreich, W., Seidell, K., Nolan, M. G., Polakowski, P., Utess, D., Ohsiek, S., Dittmar, K., Weisheit, M., Licbau, M., Fox, R.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.05.2014
Subjects
BEOL
capacitors
Hafnium compounds
High K dielectric materials
high-k
Impurities
MIM
MIM capacitors
Temperature measurement
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Summary:Decoupling MIM capacitors are typically implemented to reduce power supply noise. In this work we reported characterization of Atomic Layer Deposited (ALD) Ta 2 O 5 and Hf-doped Ta 2 O 5 high-k MIM capacitors. We investigated the impact of precursor choice and HfO 2 addition on material, electrical and reliability characteristics of MIM capacitors. We demonstrated MIM capacitors with high capacitance density, low leakage and excellent reliability which are also suitable for BEOL integration.
ISSN:2381-3555
2691-0462
DOI:10.1109/ICICDT.2014.6838595