Copper direct bonding for 3D integration
In 3D integration circuits, metal bonding is a key stage for stacking wafers. In this contribution, the direct Cu/Cu bonding at atmospheric pressure is investigated. At room temperature, a 2.8 J/m 2 bonding toughness is achieved without copper oxide at the interface. The vertical current of this bon...
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Published in | 2008 International Interconnect Technology Conference pp. 61 - 63 |
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Main Authors | , , , , , , , , |
Format | Conference Proceeding |
Language | English |
Published |
IEEE
01.06.2008
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Subjects | |
Online Access | Get full text |
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Abstract | In 3D integration circuits, metal bonding is a key stage for stacking wafers. In this contribution, the direct Cu/Cu bonding at atmospheric pressure is investigated. At room temperature, a 2.8 J/m 2 bonding toughness is achieved without copper oxide at the interface. The vertical current of this bonding and the possibility to grind the top silicon down to 10 μm have been demonstrated. |
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AbstractList | In 3D integration circuits, metal bonding is a key stage for stacking wafers. In this contribution, the direct Cu/Cu bonding at atmospheric pressure is investigated. At room temperature, a 2.8 J/m 2 bonding toughness is achieved without copper oxide at the interface. The vertical current of this bonding and the possibility to grind the top silicon down to 10 μm have been demonstrated. |
Author | di Cioccio, Lea Clavelier, Laurent Scevola, Daniel Charvet, Anne Marie Zussy, Marc Lafond, Dominique Gueguen, Pierric Bally, Laurent Rivoire, Maurice |
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Snippet | In 3D integration circuits, metal bonding is a key stage for stacking wafers. In this contribution, the direct Cu/Cu bonding at atmospheric pressure is... |
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SubjectTerms | Bonding Copper Decision support systems Quadratic programming |
Title | Copper direct bonding for 3D integration |
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