Copper direct bonding for 3D integration

In 3D integration circuits, metal bonding is a key stage for stacking wafers. In this contribution, the direct Cu/Cu bonding at atmospheric pressure is investigated. At room temperature, a 2.8 J/m 2 bonding toughness is achieved without copper oxide at the interface. The vertical current of this bon...

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Bibliographic Details
Published in2008 International Interconnect Technology Conference pp. 61 - 63
Main Authors Gueguen, Pierric, di Cioccio, Lea, Rivoire, Maurice, Scevola, Daniel, Zussy, Marc, Charvet, Anne Marie, Bally, Laurent, Lafond, Dominique, Clavelier, Laurent
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.06.2008
Subjects
Bonding
Copper
Decision support systems
Quadratic programming
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Summary:In 3D integration circuits, metal bonding is a key stage for stacking wafers. In this contribution, the direct Cu/Cu bonding at atmospheric pressure is investigated. At room temperature, a 2.8 J/m 2 bonding toughness is achieved without copper oxide at the interface. The vertical current of this bonding and the possibility to grind the top silicon down to 10 μm have been demonstrated.
ISBN:1424419115
9781424419111
ISSN:2380-632X
2380-6338
DOI:10.1109/IITC.2008.4546926