Performance Optimization and Analysis of ZnO based Ultraviolet Photodiode

In this paper a design approach for Zinc Oxide (ZnO) based p-i-n structure photodiode is demonstrated for ultraviolet (UV) detection. The peak sensitivity occurs at a range of 320nm to 340nm. The detection range can be further decreased by suitably alloying ZnO with MgO. Rigorous theoretical investi...

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Bibliographic Details
Published in2018 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) pp. 5 - 6
Main Authors Kumar, Rashmi Ranjan, Punetha, Deepak, Raghvendra, Pandey, Saurabh Kumar
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.11.2018
Subjects
Charge carrier processes
Doping
II-VI semiconductor materials
photodiode
Photodiodes
Photonic band gap
Photonics
responsivity
spectrum
ultraviolet
Zinc oxide
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Summary:In this paper a design approach for Zinc Oxide (ZnO) based p-i-n structure photodiode is demonstrated for ultraviolet (UV) detection. The peak sensitivity occurs at a range of 320nm to 340nm. The detection range can be further decreased by suitably alloying ZnO with MgO. Rigorous theoretical investigation has been performed for the device optimization to improve the responsivity. The optimization involves doping concentration and thickness calibrations of various constituent layers of the device. These results indicates that ZnO based photodetectors are good candidates for detecting ultraviolet radiation.
ISSN:2158-3242
DOI:10.1109/NUSOD.2018.8570293