The development of integration-based methods to extract parameters of two-terminal device models

We present a historic overview of the initial motivating ideas, original foundations, and subsequent development, of integration-based methods which are currently used to extract semiconductor device model parameters, as well as to assess devices¿ and circuits¿ non- linearity. To illustrate these me...

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Published in2008 9th International Conference on Solid-State and Integrated-Circuit Technology pp. 432 - 435
Main Authors Garcia-Sanchez, F.J., Ortiz-Conde, A., De Mercato, G.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.10.2008
Subjects
Data mining
Integral equations
Laboratories
Linearity
P-n junctions
Photovoltaic cells
Semiconductor device modeling
Solid state circuits
Thermal resistance
Voltage
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Summary:We present a historic overview of the initial motivating ideas, original foundations, and subsequent development, of integration-based methods which are currently used to extract semiconductor device model parameters, as well as to assess devices¿ and circuits¿ non- linearity. To illustrate these methods¿ capabilities, in this paper we review sample applications specifically focusing on two-terminal devices, such as non-ideal junctions, illuminated solar cells, and post-breakdown conduction through thin oxides. Additional applications of these integration-based extraction methods, pertaining to MOSFET models and harmonic distortion evaluation, are presented elsewhere in this conference.
ISBN:9781424421855
1424421853
DOI:10.1109/ICSICT.2008.4734567