Thermal impedance modeling of GaAs multi-finger HBTs from low frequency s-parameter measurements

Self heating in GaAs based heterojunction bipolar transistors affect the microwave performance and needs to be taken into account in circuit design. It can be modeled by the addition of a thermal impedance to a compact nonlinear transistor model. We developed thermal impedance parameters that can be...

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Bibliographic Details
Published inAsia-Pacific Microwave Conference 2011 pp. 1242 - 1245
Main Authors Sevimli, O., Parker, A. E., Fattorini, A. P., Harvey, J. T.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.12.2011
Subjects
Current measurement
Fingers
Frequency measurement
Heterojunction bipolar transistor
Heterojunction bipolar transistors
Impedance
Impedance measurement
low frequency dispersion
self heating
thermal impedance
Thermal resistance
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Summary:Self heating in GaAs based heterojunction bipolar transistors affect the microwave performance and needs to be taken into account in circuit design. It can be modeled by the addition of a thermal impedance to a compact nonlinear transistor model. We developed thermal impedance parameters that can be scaled for multi-finger devices, using the measured low frequency s-parameters of 1, 2, 4, and 6-finger transistors. The model gave very good fit to the measurements at all bias points.
ISBN:9781457720345
1457720345
ISSN:2165-4727
2165-4743