PV concentrator cells complex impedance under the bias in the dark

• Published in: 2010 35th IEEE Photovoltaic Specialists Conference pp. 001461 - 001464
• Main Authors: Perny, M, Kusko, M, Saly, V, Packa, J
• Format: Conference Proceeding
• Language: English
• Published: IEEE 01.06.2010
• Subjects: Frequency measurement; Ionization
• ISBN: 9781424458905; 1424458900
• ISSN: 0160-8371
• DOI: 10.1109/PVSC.2010.5614438

Crystalline silicon solar cells of standard design and such modified for concentrator application were studied. This work presents a complex impedance technique and its application on PV cell study. The general form of the impedance describes a semicircular locus in the complex impedance plane. Temperature variation influence or superposed DC voltage is known and standardly studied in order to describe equivalent circuit elements behavior. The calculated results obtained from impedance data, as shunt resistances and capacitances, are presented in our work. The dynamic impedance of non-concentrator crystalline silicon PV cell was determined and was compared with those obtained on concentrator cells in the dark with different bias voltage and over a frequency range of 42 Hz to 130 kHz. The experimental results confirm the derived general form of dynamic impedance.