Dot state distribution, gain and threshold in 700nm band InP/AlGaInP quantum dot lasers

We investigate the affect of growth and wafer design improvements, such as growth temperature, on the dot size distribution and dot density. This results in a threshold current density as low as 150Acm -2 for 2mm long laser device with uncoated facet at 300K.

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Bibliographic Details
Published in22nd IEEE International Semiconductor Laser Conference pp. 35 - 36
Main Authors Al-Ghamdi, M S, Smowton, P M, Blood, P, Krysa, A B
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.09.2010
Subjects
Absorption
Indium phosphide
Quantum dot lasers
Stationary state
Temperature distribution
Temperature measurement
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Abstract We investigate the affect of growth and wafer design improvements, such as growth temperature, on the dot size distribution and dot density. This results in a threshold current density as low as 150Acm -2 for 2mm long laser device with uncoated facet at 300K.
AbstractList We investigate the affect of growth and wafer design improvements, such as growth temperature, on the dot size distribution and dot density. This results in a threshold current density as low as 150Acm -2 for 2mm long laser device with uncoated facet at 300K.
Author Blood, P
Al-Ghamdi, M S
Smowton, P M
Krysa, A B
Author_xml – sequence: 1
  givenname: M S
  surname: Al-Ghamdi
  fullname: Al-Ghamdi, M S
  email: Al-GhamdiMSl@Cardiff.ac.uk
  organization: Sch. of Phys. & Astron., Cardiff Univ., Cardiff, UK
– sequence: 2
  givenname: P M
  surname: Smowton
  fullname: Smowton, P M
  organization: Sch. of Phys. & Astron., Cardiff Univ., Cardiff, UK
– sequence: 3
  givenname: P
  surname: Blood
  fullname: Blood, P
  organization: Sch. of Phys. & Astron., Cardiff Univ., Cardiff, UK
– sequence: 4
  givenname: A B
  surname: Krysa
  fullname: Krysa, A B
  organization: EPSRC Nat. Centre for III-V Technol., Univ. of Sheffield, Sheffield, UK
BookMark eNo1kMtOAjEYhatiIiAPYNz0ARzo_bIkqEhCookal6Sd_kjN0NFpWfj2jhFXJ-c7ybc4IzRIbQKEriiZUkrsbPW8XkwZ6atUgmmlTtCICiaEVIbpUzSkVuhKWUPP0MRq879xPkBDYqytrCDqAo1y_iCEEW7lEL3dtgXn4grgEHPpoj-U2KYb_O5iwi4FXHYd5F3bBNwDTUjaY__LV-lpNm-Wrk_8dXCpHPY49LLGZejyJTrfuibD5Jhj9Hp_97J4qNaPy9Vivq4i1bJUWyHI1hsnXC1CAOZcza0i2ljpNWEBrKIapKhZbaURnjDpQQA3SgJl4PkYXf95IwBsPru4d9335ngQ_wFDW1aM
ContentType Conference Proceeding
DBID 6IE
6IH
CBEJK
RIE
RIO
DOI 10.1109/ISLC.2010.5642766
DatabaseName IEEE Electronic Library (IEL) Conference Proceedings
IEEE Proceedings Order Plan (POP) 1998-present by volume
IEEE Xplore All Conference Proceedings
IEEE Electronic Library (IEL)
IEEE Proceedings Order Plans (POP) 1998-present
DatabaseTitleList
Database_xml – sequence: 1
  dbid: RIE
  name: IEEE Electronic Library (IEL)
  url: https://proxy.k.utb.cz/login?url=https://ieeexplore.ieee.org/
  sourceTypes: Publisher
DeliveryMethod fulltext_linktorsrc
Discipline Applied Sciences
EISBN 1424456827
1424456843
9781424456826
9781424456840
EISSN 1947-6981
EndPage 36
ExternalDocumentID 5642766
Genre orig-research
GroupedDBID 29F
6IE
6IF
6IH
6IK
6IL
6IM
6IN
AAJGR
ADZIZ
ALMA_UNASSIGNED_HOLDINGS
BEFXN
BFFAM
BGNUA
BKEBE
BPEOZ
CBEJK
CHZPO
IEGSK
IJVOP
IPLJI
JC5
OCL
RIE
RIL
RIO
RNS
ID FETCH-LOGICAL-i175t-f440fb8a4ac4dde2aac39607895b702de9617e54c2c9584b025be4e3865e12eb3
IEDL.DBID RIE
ISBN 9781424456833
1424456835
ISSN 0899-9406
IngestDate Wed Jun 26 19:27:27 EDT 2024
IsPeerReviewed false
IsScholarly true
Language English
LinkModel DirectLink
MergedId FETCHMERGED-LOGICAL-i175t-f440fb8a4ac4dde2aac39607895b702de9617e54c2c9584b025be4e3865e12eb3
PageCount 2
ParticipantIDs ieee_primary_5642766
PublicationCentury 2000
PublicationDate 2010-Sept.
PublicationDateYYYYMMDD 2010-09-01
PublicationDate_xml – month: 09
  year: 2010
  text: 2010-Sept.
PublicationDecade 2010
PublicationTitle 22nd IEEE International Semiconductor Laser Conference
PublicationTitleAbbrev ISLC
PublicationYear 2010
Publisher IEEE
Publisher_xml – name: IEEE
SSID ssj0020395
ssj0000527291
Score 1.7861428
Snippet We investigate the affect of growth and wafer design improvements, such as growth temperature, on the dot size distribution and dot density. This results in a...
SourceID ieee
SourceType Publisher
StartPage 35
SubjectTerms Absorption
Indium phosphide
Quantum dot lasers
Stationary state
Temperature distribution
Temperature measurement
Title Dot state distribution, gain and threshold in 700nm band InP/AlGaInP quantum dot lasers
URI https://ieeexplore.ieee.org/document/5642766
hasFullText 1
inHoldings 1
isFullTextHit
isPrint
link http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwjZ3NT8IwFMAb4OQJFYzf6cEjg65ru_VoUAQjhkSJ3EjbFUOUobJd_Ot93caMxoOnbb1sa9_2fq_vC6ELDUKgLBdewLXymNHEk1GkPRlI38rISJtv6I_vxXDKbmd8VkOdKhfGWpsHn9muO819-fHaZG6rrMcBlkMh6qgeEVrkalX7KYRT4MQqvIOSIO-44rxangSttU3q4gKYY1vrqbwOSnenT2Rv9HDXLyK-yrv9aLuSa51BE423z1sEm7x0s1R3zeevUo7_faFd1P7O78OTSnPtoZpN9lGzBFJcfu6bFnq6Wqc4TznCsSuwW_bG6uBntUywSmKcgihsnAcLw0BISLLC2o2Pkknv8vVGwRG_Z7B62QqD_YuB1YE322g6uH7sD72yE4O3BLxIvQVjZKEjxZRh8D-kSpkATJ8wklyHhMZWAghZzgw1EohGA0hpy6zrJ2p9Cvb6AWok68QeIqyoMkKJQMcMbDnla8D7hdGhWbA4EIYeoZabp_lbUWxjXk7R8d_DJ2incOe7oK9T1Eg_MnsGlJDq81w8vgAVDLRT
link.rule.ids 310,311,786,790,795,796,802,27958,55109
linkProvider IEEE
linkToHtml http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwjZ3NT8IwFMAbxIOeUMH4bQ8eKYyu69ajQREUCIkQuZG26wxRhsp28a_3dRsYjQdP295hH12393t9XwhdKZgE0nicuJ6ShGnlEBEEighXtIwItDDZgv5gyLsTdj_1piVU3-TCGGOy4DPTsLuZLz9c6tQulTU9gGWf8y20DXreEXm21mZFxfEokOImwIM6btZzxfq1iAC9tU7r8jhQx7raU3HsFg5POGuz99hv5zFfxfV-NF7J9E6nggbrO87DTV4aaaIa-vNXMcf_PtIeqn1n-OHRRnfto5KJD1ClQFJcfPCrKnq6WSY4SzrCoS2xW3THquNnOY-xjEOcwGRYWR8WBoHvOPECKyvvxaPm9eudhC1-T-H9pQsMFjAGWgfirKFJ53bc7pKiFwOZA2AkJGLMiVQgmdQM_ohUSu2C8eMHwlO-Q0MjAIWMxzTVAphGAUopw4ztKGpaFCz2Q1SOl7E5QlhSqbnkrgoZWHOypQDwI618HbHQ5Zoeo6odp9lbXm5jVgzRyd_iS7TTHQ_6s35v-HCKdnPnvg0BO0Pl5CM158AMibrIpsoX0Li3qQ
openUrl ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Abook&rft.genre=proceeding&rft.title=22nd+IEEE+International+Semiconductor+Laser+Conference&rft.atitle=Dot+state+distribution%2C+gain+and+threshold+in+700nm+band+InP%2FAlGaInP+quantum+dot+lasers&rft.au=Al-Ghamdi%2C+M+S&rft.au=Smowton%2C+P+M&rft.au=Blood%2C+P&rft.au=Krysa%2C+A+B&rft.date=2010-09-01&rft.pub=IEEE&rft.isbn=9781424456833&rft.issn=0899-9406&rft.eissn=1947-6981&rft.spage=35&rft.epage=36&rft_id=info:doi/10.1109%2FISLC.2010.5642766&rft.externalDocID=5642766
thumbnail_l http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/lc.gif&issn=0899-9406&client=summon
thumbnail_m http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/mc.gif&issn=0899-9406&client=summon
thumbnail_s http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/sc.gif&issn=0899-9406&client=summon