Dot state distribution, gain and threshold in 700nm band InP/AlGaInP quantum dot lasers

We investigate the affect of growth and wafer design improvements, such as growth temperature, on the dot size distribution and dot density. This results in a threshold current density as low as 150Acm -2 for 2mm long laser device with uncoated facet at 300K.

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Bibliographic Details
Published in22nd IEEE International Semiconductor Laser Conference pp. 35 - 36
Main Authors Al-Ghamdi, M S, Smowton, P M, Blood, P, Krysa, A B
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.09.2010
Subjects
Absorption
Indium phosphide
Quantum dot lasers
Stationary state
Temperature distribution
Temperature measurement
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Summary:We investigate the affect of growth and wafer design improvements, such as growth temperature, on the dot size distribution and dot density. This results in a threshold current density as low as 150Acm -2 for 2mm long laser device with uncoated facet at 300K.
ISBN:9781424456833
1424456835
ISSN:0899-9406
1947-6981
DOI:10.1109/ISLC.2010.5642766