Micro-photoreflectance spectroscopy investigation of InGaAlAs/GaAsSb/InP heterojunction bipolar transistors

We characterize InGaAlAs/GaAsSb/InP heterojunction bipolar transistor structures using microphotoreflectance spectroscopy (micro-PR). The experiments show the feasibility of micro-PR measurement on a 1/spl mu/m diameter spot opening the way to device optical characterization under operation.

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Bibliographic Details
Published inInternational Conference on Indium Phosphide and Related Materials, 2005 pp. 200 - 203
Main Authors Chouaib, H., Bakouboula, A., Benyattou, T., Bru-Chevallier, C., Lahreche, H., Bove, P.
Format Conference Proceeding
LanguageEnglish
Published IEEE 2005
Subjects
Heterojunction bipolar transistors
Indium gallium arsenide
Indium phosphide
Laser beams
Laser excitation
Optical attenuators
Optical devices
Probes
Spectroscopy
Surface emitting lasers
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Summary:We characterize InGaAlAs/GaAsSb/InP heterojunction bipolar transistor structures using microphotoreflectance spectroscopy (micro-PR). The experiments show the feasibility of micro-PR measurement on a 1/spl mu/m diameter spot opening the way to device optical characterization under operation.
ISBN:9780780388918
0780388917
ISSN:1092-8669
DOI:10.1109/ICIPRM.2005.1517456