Numerical modeling of the CIGS thin film solar cell with varied defect density and Ga content

This work studies the different impacts of two main kind defects which determine the performance of Copper Indium Gallium Diselenide (CIGS) solar cells theoretically. The trend of capability with varied defect density and Ga content was investigated in detail. The deep defect results have been achie...

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Bibliographic Details
Published in2010 3rd International Nanoelectronics Conference (INEC) pp. 277 - 278
Main Authors Minchao Zhou, Hao Ye, Yong Fu, Dayuan Xiong, Fangmin Guo
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.01.2010
Subjects
Copper
Current density
Electric resistance
Gallium compounds
Indium
Numerical models
Optical films
Photonic band gap
Photovoltaic cells
Transistors
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Summary:This work studies the different impacts of two main kind defects which determine the performance of Copper Indium Gallium Diselenide (CIGS) solar cells theoretically. The trend of capability with varied defect density and Ga content was investigated in detail. The deep defect results have been achieved, which are in accordance with the experimental data.
ISBN:9781424435432
1424435439
ISSN:2159-3523
DOI:10.1109/INEC.2010.5424684