Fabrication of micromechanically-modulated MgO magnetic tunnel junction sensors

We have developed a hybrid magnetoresistive (MR)-MEMS sensor based on the monolithic integration of magnetic thin films and SOI MEMS fabrication techniques. MgO magnetic tunnel junctions (MTJ) on bulk micromachined silicon structures form a hybrid sensing platform in which the MEMS structure is used...

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Bibliographic Details
Published in2010 IEEE 23rd International Conference on Micro Electro Mechanical Systems (MEMS) pp. 667 - 670
Main Authors Jaramillo, Gerardo, Mei Lin Chan, Guedes, Andre, Horsley, David A
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.01.2010
Subjects
Fabrication
Frequency
Magnetic fields
Magnetic modulators
Magnetic resonance
Magnetic sensors
Magnetic tunneling
Magnetoresistance
Micromechanical devices
Thin film sensors
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Summary:We have developed a hybrid magnetoresistive (MR)-MEMS sensor based on the monolithic integration of magnetic thin films and SOI MEMS fabrication techniques. MgO magnetic tunnel junctions (MTJ) on bulk micromachined silicon structures form a hybrid sensing platform in which the MEMS structure is used to mechanically modulate the magnetic field signal detected by the MTJ. We demonstrate the modulation of DC magnetic field through the mechanical motion of the cantilever at resonance. This allows for the improved detection of small DC or low frequency magnetic signals modulated into the high frequency region where the 1/f noise is lower.
ISBN:1424457610
9781424457618
ISSN:1084-6999
DOI:10.1109/MEMSYS.2010.5442320