Quantum compact model for ballistic double gate MOSFETs

A proposed compact model including quantum confinement and drain induced barrier lowering (DIBL) based on the calculation of charge and injection velocity is presented. The model used a single expression for current calculation in all regions to ensure the continuity of the model over all regions of...

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Bibliographic Details
Published in2009 4th International Conference on Design & Technology of Integrated Systems in Nanoscal Era pp. 144 - 146
Main Authors El Sabbagh, M., Fikry, W., Omar, O.A.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.04.2009
Subjects
ballistic current
DIBL
Double gate MOSFETs
Electrons
Mathematical model
Mathematics
MOSFETs
Numerical simulation
Physics
quantum mechanical effects
Quantum mechanics
Rough surfaces
Surface roughness
Voltage
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Summary:A proposed compact model including quantum confinement and drain induced barrier lowering (DIBL) based on the calculation of charge and injection velocity is presented. The model used a single expression for current calculation in all regions to ensure the continuity of the model over all regions of operation. The model succeeded to simulate the ballistic double gate (DG) nano MOSFETs from linear to saturation regions of operation. The validation of the model was done by comparison with the standard NANOMOS numerical simulation. The error in the saturation region is about 6% and does not exceed 10% in the linear region.
ISBN:9781424443208
1424443202
DOI:10.1109/DTIS.2009.4938043