Memristor Drift Model based on conservation of mobile vacancies

• Published in: 45th Southeastern Symposium on System Theory pp. 12 - 16
• Main Authors: Rudra, M. R., Pieper, R. J.
• Format: Conference Proceeding
• Language: English
• Published: IEEE 01.03.2013
• Subjects: Conductivity; Integrated circuit modeling; linear drift model; Mathematical model; memristor; Memristors; Mobile communication; numerical analysis; Numerical models; Resistance

A significant percentage of the analysis applied to memristors is based on the Linear Drift Model. In the Linear Drift Model the resistance of the doped region increases in direct proportion to the width of the doped region. It is shown that this is not consistent with the physical conservation of t...