Memristor Drift Model based on conservation of mobile vacancies

A significant percentage of the analysis applied to memristors is based on the Linear Drift Model. In the Linear Drift Model the resistance of the doped region increases in direct proportion to the width of the doped region. It is shown that this is not consistent with the physical conservation of t...

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Bibliographic Details
Published in45th Southeastern Symposium on System Theory pp. 12 - 16
Main Authors Rudra, M. R., Pieper, R. J.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.03.2013
Subjects
Conductivity
Integrated circuit modeling
linear drift model
Mathematical model
memristor
Memristors
Mobile communication
numerical analysis
Numerical models
Resistance
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Summary:A significant percentage of the analysis applied to memristors is based on the Linear Drift Model. In the Linear Drift Model the resistance of the doped region increases in direct proportion to the width of the doped region. It is shown that this is not consistent with the physical conservation of the mobile vacancies. A circuit model is proposed which is consistent with the conservation of the mobile vacancies and takes into account a high constant intrinsic resistivity indicative of the memristor "off state". A numerical analysis (NA) scheme is tested and compared with reported Hewlett Packard memristor data and with the theoretical solution for the Linear Drift Model.
ISBN:9781479900374
1479900370
ISSN:0094-2898
2161-8135
DOI:10.1109/SSST.2013.6524959