Growth and characterization of III-N ultraviolet lasers and avalanche photodiodes by MOCVD

The field of ultraviolet (UV) photonics at wavelengths λ<;400nm is an area of increasing practical interest and coherent light sources and fast, sensitive photodetectors are needed for many important applications. The GaN-based near-UV lasers at ~370nm in this report were epitaxially grown on a c...

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Published in2017 Conference on Lasers and Electro-Optics (CLEO) pp. 1 - 2
Main Authors Mi-Hee Ji, Yuh-Shiuan Liu, Jeomoh Kim, Young-Jae Park, Detchprohm, Theeradetch, Dupuis, Russell D., Tsung-Ting Kao, Shyh-Chiang Shen, Mehta, Karan, Yoder, P. Douglas, Hongen Xie, Ponce, Fernando, Sood, Ashok, Dhar, Nibir, Lewis, Jay
Format Conference Proceeding
LanguageEnglish
Published The Optical Society 01.05.2017
Subjects
Apertures
Avalanche photodiodes
Gallium nitride
Laser excitation
Light emitting diodes
MOCVD
Vertical cavity surface emitting lasers
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Summary:The field of ultraviolet (UV) photonics at wavelengths λ<;400nm is an area of increasing practical interest and coherent light sources and fast, sensitive photodetectors are needed for many important applications. The GaN-based near-UV lasers at ~370nm in this report were epitaxially grown on a c-axis n-type GaN:Si and (0001) sapphire substrates using metalorganic chemical vapor deposition (MOCVD) and fabricated into optically pumped vertical-cavity UV lasers. Similar structures were grown incorporating p-n junctions to created micro-cavity UV LEDs. Also in this work, GaN UV PIPIN avalanche photodiodes (APDs) are grown on "free-standing" (FS) and "bulk" n-type (0001) GaN substrates having low dislocation densities by MOCVD and APDs were fabricated and tested.
DOI:10.1364/CLEO_SI.2017.STh1C.3.